Yuhuan CNC Machine Tool Co., Ltd.

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Single-side grinding of silicon carbide crystal rods

The core process in silicon carbide production is the processing of silicon carbide substrates, mainly divided into three processes: cutting, thinning, and polishing. Thinning is mainly achieved through grinding and polishing to remove the cutting marks and damaged layers caused by the slicing process on the surface of the silicon carbide wafer.

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Typical processed parts

Equipment highlights

Single-side grinding of silicon carbide ingots is a crucial process in silicon carbide substrate manufacturing for the precision machining of ingot end faces or the surfaces of wafers after cutting. Unlike external cylindrical grinding, single-side grinding focuses on achieving high planarity, low surface roughness, and precise thickness control on a single surface, providing a foundation for subsequent wafer polishing or device manufacturing.

Precision Single-Side Grinding Machine:
1. High-rigidity structure: Resists the enormous cutting forces during silicon carbide grinding.
2. Air hydrostatic spindle/high-precision spindle: Drives the diamond wheel at high speed (typically > 1,500 rpm), ensuring smooth and vibration-free operation.
3. Vacuum chuck or special fixture: Flatly adheres the wafer/ingot, preventing deformation and slippage during clamping (especially crucial for thin wafers).
4. Online thickness measurement system: Monitors wafer thickness and TTV in real time, enabling closed-loop control.
5. Multi-axis CNC system: Precisely controls parameters such as the wheel path, feed rate, and speed.

Process (using wafer grinding as an example):
Loading: The wafer is vacuum-adhered to a precision ceramic chuck to ensure no loosening.
Rough grinding: High feed rate removes most of the material (e.g., removing the cutting damage layer of 30μm), quickly reaching the vicinity of the target thickness.
Fine grinding: Reduces the feed rate, using multiple passes of progressive grinding to optimize planarity (TTV < 2μm) and surface roughness (Ra < 0.2μm).
Online measurement and compensation: The thickness sensor provides real-time feedback, automatically adjusting the wheel position to compensate for wear.
Cleaning and drying: Removes surface debris and coolant residue.

Technical parameters

Silicon carbide roll grinder

Single-side polishing of silicon carbide wafers

Silicon carbide roll grinder

Single-side polishing of silicon carbide wafers